BDP955 datasheet pdf

Semiconductor Group 1Nov-28-1996 BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP952...BDP956 (PNP) TypeMarkingOrdering CodePin ConfigurationPackage BDP 951BDP 951Q62702-D13391 = B2 = C3 = E4 = CSOT-223 BDP 953BDP 953Q62702-D13411 = B2 = C3 = E4 = CSOT-223 BDP 955PDP 955Q62702-D13431 = B2 = C3 = E4 = CSOT-223 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltage BDP 951 BDP 953 BDP 955 V CEO 120 100 80 V Collector-base voltage BDP 951 BDP 953 BDP 955 V CBO 140 120 100 Emitter-base voltageV EBO 5 DC collector currentI C 3A Peak collector currentI CM 5 Base currentI B 200mA Peak base currentI BM 500 Total power dissipation, T S = 99°CP tot 3W Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 42 K/W Junction - soldering pointR thJS ≤ 17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu

Specifications