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BDP951 ... BDP955 1Aug-06-2001 NPN Silicon AF Power Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP952 ... BDP956 (PNP) VPS05163 1 2 3 4 TypeMarkingPin ConfigurationPackage BDP951 BDP953 BDP955 BDP 951 BDP 953 PDP 955 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 4 = C 4 = C 4 = C SOT223 SOT223 SOT223 Maximum Ratings Parameter BDP 951SymbolUnitBDP 955BDP 953 80100 V CEO Collector-emitter voltage120V Collector-base voltage V CBO 100120140 Emitter-base voltage V EBO 555 3ADC collector current I C Peak collector current5 I CM Base current I B 200mA 500 I BM Peak base current Total power dissipation, T S = 99 °CP tot W3 Junction temperature T j 150°C -65 ... 150Storage temperature T stg Thermal Resistance Junction - soldering point 1) R thJS 17K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance