BDP956 datasheet pdf

Semiconductor Group 1Nov-28-1996 BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP951...BDP955 (NPN) TypeMarkingOrdering CodePin ConfigurationPackage BDP 952BDP 952Q62702-D13401 = B2 = C3 = E4 = CSOT-223 BDP 954BDP 954Q62702-D13421 = B2 = C3 = E4 = CSOT-223 BDP 956BDP 956Q62702-D13441 = B2 = C3 = E4 = CSOT-223 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltage BDP 952 BDP 954 BDP 956 V CEO 120 100 80 V Collector-base voltage BDP 952 BDP 954 BDP 956 V CBO 140 120 100 Emitter-base voltageV EBO 5 DC collector currentI C 3A Peak collector currentI CM 5 Base currentI B 200mA Peak base currentI BM 500 Total power dissipation, T S = 99°CP tot W Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 42 K/W Junction - soldering pointR thJS ≤ 17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu

Specifications