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© Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 14 1Publication Order Number: BDV65B/D BDV65B(NPN), BDV64B(PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features •High DC Current Gain − HFE = 1000 (min) @ 5 Adc •Monolithic Construction with Built−in Base Emitter Shunt Resistors •These are Pb−Free Devices* MAXIMUM RATINGS RatingSymbolMaxUnit Collector−Emitter VoltageV CEO 100Vdc Collector−Base VoltageV CB 100Vdc Emitter−Base VoltageV EB 5.0Vdc Collector Current− Continuous − Peak I C 10 20 Adc Base CurrentI B 0.5Adc Total Device Dissipation @ T C = 25°C Derate above 25°C P D 125 1.0 W W/°C Operating and Storage Junction Temperature Range T J , T stg -65 to +150 °C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction−to−Case R q JC 1.0°C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOT−93 (TO−218) CASE 340D 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100−120 VOLTS, 125 WATTS http://onsemi.com COLLECTOR 2,4 BASE 1 EMITTER 3 COLLECTOR 2 BASE 1 EMITTER 3 NPNPNP BDV65BBDV64B 3 2 1 TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION