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BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION 1 JUNE 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C l125 W at 25°C Case Temperature l12 A Continuous Collector Current lMinimum h FE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA B C E 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.This value applies for t p ≤ 0.1 ms, duty cycle ≤ 10% 2.Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. RATINGSYMBOLVALUEUNIT Collector-base voltage (I E = 0) BDV65 BDV65A BDV65B BDV65C V CBO 60 80 100 120 V Collector-emitter voltage (I B = 0) BDV65 BDV65A BDV65B BDV65C V CEO 60 80 100 120 V Emitter-base voltageV EBO 5V Continuous collector currentI C 12A Peak collector current (see Note 1)I CM 15A Continuous base currentI B 0.5A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 125W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 3.5W Operating junction temperature rangeT j -65 to +150°C Storage temperature rangeT stg -65 to +150°C Lead temperature 3.2 mm from case for 10 secondsT L 260°C