BDX14AA datasheet pdf

- 90V - 55V - 60V - 90V -7V -4V -2V 29W 200°C –65 to 200°C 6°C / W BDX14AA Prelim. 02/00 Semelab plc.Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk PNP SILICON TRANSISTOR, EPITAXIAL BASE FEATURES: • LF Large Signal Power Amplification • Medium Current Switching V CBO Collector – Base Voltage (Open Emitter) V CEO Collector – Emitter Voltage (Open Base) V CER Collector – Emitter Voltage R BE =100W V CEX Collector – Base Voltage V BE = +1.5V V EBO Emitter – Base Voltage I C Collector Current I B Base Current P tot Power Dissipation T J Maximum Junction Temperature T STG Storage Temperature R th-(j-c) Junction to Case. MECHANICAL DATA Dimensions in mm ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated) 24.33 (0.958)24.43 (0.962) 14.48 (0.570)14.99 (0.590) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 0.71 (0.028)0.86 (0.034) 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 11.94 (0.470)12.70 (0.500) TO66 Package. Pin 1 – BasePin 2 – EmitterCase - Collector

Features

• - 90V
• - 55V
• - 60V
• - 90V
• -7V
• -4V
• -2V
• • LF Large Signal Power Amplification
• • Medium Current Switching
• 24.33 (0.958)24.43 (0.962)
• 14.48 (0.570)14.99 (0.590)
• 3.68
• 3.61 (0.142)
• 3.86 (0.145)
• 0.71 (0.028)0.86 (0.034)
• 1.27 (0.050)
• 1.91 (0.750)
• 9.14 (0.360)
• 4.83 (0.190)
• 5.33 (0.210)
• 6.35 (0.250)
• 8.64 (0.340)
• 11.94 (0.470)12.70 (0.500)