BDX33A datasheet pdf

©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BDX33/A/B/C NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted SymbolParameterValueUnits V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C 45 60 80 100 V V V V V CEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C 45 60 80 100 V V V V I C Collector Current (DC) 10A I CP *Collector Current (Pulse) 15A I B Base Current0.25A P C Collector Dissipation (T C =25°C) 70W T J Junction Temperature 150°C T STG Storage Temperature- 65 ~ 150°C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively 1.Base 2.Collector 3.Emitter 1 TO-220

Specifications