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BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheBDX33BandBDX33Caresilicon Epitaxial-BaseNPNpowertransistorsin monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. INTERNAL SCHEMATIC DIAGRAM October 1999 ABSOLUTE MAXIMUM RATINGS Symb olP arameterUn it NPNBDX33BBDX33C PNPBDX34BBDX34C V CBO Collector-Base Voltage (I E = 0)80100V V CEO Collector-Emitter Voltage (I B = 0)80100V I C Collector Current10A I CM Collector Peak Current15A I B Base Current0.25A P tot Total Dissipation at T c ≤ 25 o C 70W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220 R 1 Typ. = 10 KΩR 2 Typ. = 150Ω 1/4
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