BDX34B datasheet pdf

BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheBDX33BandBDX33Caresilicon Epitaxial-BaseNPNpowertransistorsin monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively.  INTERNAL SCHEMATIC DIAGRAM October 1999 ABSOLUTE MAXIMUM RATINGS Symb olP arameterUn it NPNBDX33BBDX33C PNPBDX34BBDX34C V CBO Collector-Base Voltage (I E = 0)80100V V CEO Collector-Emitter Voltage (I B = 0)80100V I C Collector Current10A I CM Collector Peak Current15A I B Base Current0.25A P tot Total Dissipation at T c ≤ 25 o C 70W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220 R 1 Typ. = 10 KΩR 2 Typ. = 150Ω 1/4