BDX34B (3) datasheet pdf

© Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 14 1Publication Order Number: BDX33B/D BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features •High DC Current Gain − h FE = 2500 (typ.) at I C = 4.0 •Collector−Emitter Sustaining Voltage at 100 mAdc V CEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C •Low Collector−Emitter Saturation Voltage V CE(sat) = 2.5 Vdc (max) at I C = 3.0 Adc − BDX33B, 33C/34B, 34C •Monolithic Construction with Build−In Base−Emitter Shunt Resistors •These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS RatingSymbolValueUnit Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C V CEO 80 100 Vdc Collector−Base Voltage BDX33B, BDX34B BDX33C, BDX34C V CB 80 100 Vdc Emitter−Base VoltageV EB 5.0Vdc Collector Current Continuous Peak I C 10 15 Adc Base CurrentI B 0.25Adc Total Device Dissipation @ T C = 25°C Derate above 25°C P D 70 0.56 W W/°C Operating and Storage Junction Temperature Range T J , T stg − 65 to +150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS CharacteristicsSymbolMaxUnit Thermal Resistance, Junction−to−Case R q JC 1.78°C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS TO−220 CASE 221A STYLE 1 1 www.onsemi.com MARKING DIAGRAM BDX3xy =Device Code x = 3 or 4 y = B or C A=Assembly Location Y=Year WW=Work Week G=Pb−Free Package 2 3 BDX3xyG AY WW See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION

Features

• •High DC Current Gain − h
• •Collector−Emitter Sustaining Voltage at 100 mAdc
• •Low Collector−Emitter Saturation Voltage
• •Monolithic Construction with Build−In Base−Emitter Shunt Resistors
• •These Devices are Pb−Free and are RoHS Compliant*
• 5.0Vdc
• 0.25Adc
• 0.56
• 1.78°C/W
• *For additional information on our Pb−Free strategy and soldering details, please