BDX53B (1) datasheet pdf

© Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 15 1Publication Order Number: BDX53B/D BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain − h FE = 2500 (Typ) @ I C = 4.0 Adc •Collector Emitter Sustaining Voltage − @ 100 mAdc V CEO(sus) = 80 Vdc (Min) − BDX53B, 54B V CEO(sus) = 100 Vdc (Min) − BDX53C, 54C •Low Collector−Emitter Saturation Voltage − V CE(sat) = 2.0 Vdc (Max) @ I C = 3.0 Adc V CE(sat) = 4.0 Vdc (Max) @ I C = 5.0 Adc •Monolithic Construction with Built−In Base−Emitter Shunt Resistors •These Devices are Pb−Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎ ÎÎÎ Symbol ÎÎÎÎ ÎÎÎÎ Value ÎÎÎ ÎÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage BDX53B, BDX54B BDX53C, BDX54C ÎÎÎ ÎÎÎ ÎÎÎ V CEO ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 80 100 ÎÎÎ ÎÎÎ ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage BDX53B, BDX54B BDX53C, BDX54C ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ V CB ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 80 100 ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage ÎÎÎ V EB ÎÎÎÎ 5.0 ÎÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current− Continuous − Peak ÎÎÎ ÎÎÎ ÎÎÎ I C ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 8.0 12 ÎÎÎ ÎÎÎ ÎÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎ ÎÎÎ I B ÎÎÎÎ ÎÎÎÎ 0.2 ÎÎÎ ÎÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ T C = 25°C Derate above 25°C ÎÎÎ ÎÎÎ P D ÎÎÎÎ ÎÎÎÎ 65 0.48 ÎÎÎ ÎÎÎ W W/°C ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range ÎÎÎ ÎÎÎ ÎÎÎ T J , T stg ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ −65 to + 150 ÎÎÎ ÎÎÎ ÎÎÎ °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic ÎÎÎ ÎÎÎ Symbol ÎÎÎÎ ÎÎÎÎ Max ÎÎÎ ÎÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient ÎÎÎ R q JA ÎÎÎÎ 70 ÎÎÎ °C/W ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case ÎÎÎ ÎÎÎ R q JC ÎÎÎÎ ÎÎÎÎ 1.92 ÎÎÎ ÎÎÎ °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 −100 VOLTS, 65 WATTS TO−220 CASE 221A STYLE 1 1 2 3 4 MARKING DIAGRAM & PIN ASSIGNMENT 1 Base 3 Emitter 4 Collector 2 Collector www.onsemi.com BDX5xy =Device Code x = 3 or 4 y = B or C A=Assembly Location Y=Year WW=Work Week G=Pb−Free Package BDX5xyG AY WW See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION

Features

• •High DC Current Gain −
• •Collector Emitter Sustaining Voltage − @ 100 mAdc
• •Low Collector−Emitter Saturation Voltage −
• •Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• •These Devices are Pb−Free and are RoHS Compliant*
• 5.0
• 8.0
• 0.2
• 0.48
• 1.92
• *For additional information on our Pb−Free strategy and soldering details, please