BDX54 datasheet pdf

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BDX54 datasheet pdf

Datasheet Information

Pages: 4

I EBO Emitter Cut-off Current V EB = - 5V, I C = 0 - 2mA

I C = - 100mA, I B = 0 - 45 - 60 - 80 - 100 V V V V I CBO Collector Cut-off Current : BDX54 : BDX54A : BDX54B : BDX54C V CB = - 45V, I E = 0 V CB = - 60V, I E = 0 V CB = - 80V, I E = 0 V CB = - 100V, I E = 0 - 200 - 200 - 200 - 200 μA μA μA μA I CEO Collector Cut-off Current : BDX54 : BDX54A : BDX54B : BDX54C V CE = - 22V, I B = 0 V CE = - 30V, I B = 0 V CE = - 40V, I B = 0 V CE = - 50V, I B = 0 - 500 - 500 - 500 - 500 μA μA μA μA

Specifications

©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BDX54/A/B/C PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle =1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BDX54 : BDX54A : BDX54B : BDX54C - 45 - 60 - 80 - 100 V V V V V CEO Collector-Emitter Voltage : BDX54 : BDX54A : BDX54B : BDX54C - 45 - 60 - 80 - 100 V V V V

V EBO Emitter-Base Voltage - 5V I C Collector Current (DC) - 8A I CP *Collector Current (Pulse) - 12A I B Base Current- 0.2A P C Collector Dissipation (T C =25°C) 60W T J Junction Temperature 150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)* Collector-Emitter Sustaining Voltage : BDX54 : BDX54A : BDX54B : BDX54C

BDX54 datasheet pdf