BDX63 datasheet pdf

BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. V CEO Collector - emitter voltage (open base) V CBO Collector - base voltage (open emitter) V EBO Emitter - base voltage (open collector) I C Collector current I CM Collector current (peak) I B Base current P tot Total power dissipation at T case = 25°C T j Maximum junction temperature T stj Storage junction temperature R th j-mb Thermal resistance, junction to mounting base. 6080100120V 80100120140V 5555V 8A 12A 150mA 90W 200°C -65 to 200°C 1.94°C / W MECHANICAL DATA Dimensions in mm ABSOLUTE MAXIMUM RATINGS (T case =25°C unless otherwise stated) ìïïïïíïïïïî