BDX67C datasheet pdf

BDX67 BDX67A BDX67B BDX67C Semelab plc.Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 7/99 NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. PNP complements are: BDX66, BDX66A, BDX66B, BDX66C. V CEO Collector - emitter voltage (open base) V CBO Collector - base voltage (open emitter) V EBO Emitter - base voltage (open collector) I C Collector current I CM Collector current (peak) I B Base current P tot Total power dissipation at T mb = 25°C T j Maximum junction temperature T stj Storage junction temperature R th j-mb Thermal resistance, junction to mounting base. 6080100120V 80100120140V 5555V 16A 20A 250mA 150W 200°C -65 to +200°C 1.17K/ W MECHANICAL DATA Dimensions in mm ABSOLUTE MAXIMUM RATINGS (T case =25°C unless otherwise stated) ìïïïïíïïïïî TO3 Package. Case connected to collector. BDX BDX BDX BDX 6767A 67B 67C BE 4.2 26.6 max. 39.5 max. 30.1 16.9 10.9 2.5 1.0 12.8 20.3 max. 9.0 max.