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BDY90 HIGH CURRENT NPN SILICON TRANSISTOR nSGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Value V CBO Collector-base Voltage (I E = 0)120V V CEV Collector-emitter Voltage (V BE = -1.5V)120V V CEO Collector-emitter Voltage (I B = 0)100V V EBO Emitter-base Voltage (I C = 0)6V I C Collector Current10A I CM Collector Peak Current (repetitive)15A I B Base Current2A P tot Total Dissipation at T c ≤ 25 o C60W T stg Storage Temperature-65 to 175 o C T j Max. Operating Junction Temperature175 o C 1 2 TO-3 1/4
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