BF1005SR datasheet pdf

2007-04-20 1 BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 G2 G1 GND AGC RF Input Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypePackagePin ConfigurationMarking BF1005S BF1005SR SOT143 SOT143R 1=S 1=D 2=D 2=S 3=G2 3=G1 4=G1 4=G2 - - - - NZs NZs Maximum Ratings Parameter SymbolValueUnit Drain-source voltageV DS 8V Continuous drain currentI D 25mA Gate 1/ gate 2-source current±I G1/2SM 10 Gate 1 (external biasing)+V G1SE 3V Total power dissipation T S ≤ 76 °C P tot 200mW Storage temperatureT stg -55 ... 150 °C Channel temperatureT ch 150 1 Pb-containing package may be available upon special request Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.

Specifications