Loading PDF...
Pages: 5
BF543 Jun-28-20011 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications I DSS = 4mA, g fs = 12mS 1 2 3 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BF543LDs1 = G2 = D3 = SSOT23 Maximum Ratings Parameter SymbolValueUnit Drain-source voltageV DS 20V Drain currentI D 30mA Gate-source peak current I GSM 10 Total power dissipation, T S 76 °C P tot 200mW Storage temperatureT stg -55 ... 150°C Ambient temperature rangeT A -55 ... 150 Channel temperatureT ch 150 Thermal Resistance Channel - soldering point 1) R thchs 370K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance