BF545A datasheet pdf

BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011Product data sheet SOT23 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. Table 1.Quick reference data SymbolParameterConditionsMinTypMaxUnit V DS drain-source voltage--30V V GSoff gate-source cut-off voltage I D =1A; V DS =15V0.4-7.8V I DSS drain currentV GS =0V; V DS =15V BF545A2-6.5mA BF545B6-15mA BF545C12-25mA P tot total power dissipationT amb 25C--250mW y fs forward transfer admittance V GS =0V; V DS =15V3-6.5mS