1. Product profile
1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
Features
- 1.2 Features and benefits
- 1.3 Applications
- 1.4 Quick reference data
Specifications
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors
Rev. 4 — 15 September 2011Product data sheet
SOT23
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1.Quick reference data
SymbolParameterConditionsMinTypMaxUnit
V
DS
drain-source voltage--30V
V
GSoff
gate-source cut-off
voltage
I
D
=1A; V
DS
=15V0.4-7.8V
I
DSS
drain currentV
GS
=0V; V
DS
=15V
BF545A2-6.5mA
BF545B6-15mA
BF545C12-25mA
P
tot
total power dissipationT
amb
25C--250mW
y
fs
forward transfer
admittance
V
GS
=0V; V
DS
=15V3-6.5mS