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BF579/BF579R Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (5) Document Number 85001 Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features DHigh transition frequency DLow distortion 13 581 23 1 94 9280 BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 13 581 23 1 9510527 BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltage–V CBO 20V Collector-emitter voltage–V CEO 20V Emitter-base voltage–V EBO 3V Collector current–I C 25mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –55 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W