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C SOT23 NPN SILICON PLANAR RF TRANSISTORS ISSUE 4 – MARCH 2001 PARTMARKING DETAILS — BFS17L - E1L BFS17H - E1H ABSOLUTE MAXIMUM RATINGS. PARAMETERSYMBOLVALUEUNIT Collector-Base VoltageV CBO 25V Collector-Emitter VoltageV CEO 15V Emitter-Base VoltageV EBO 2.5V Peak Pulse CurrentI CM 50mA Continuous Collector CurrentI C 25mA Power Dissipation at T amb =25°CP tot 330mW Operating and Storage Temperature RangeT j :T stg -55 to +150°C ELECTRICAL CHARACTERISTICS (at T amb = 25°C). PARAMETERSYMBOLMIN.TYP.MAX.UNIT CONDITIONS. Collector Cut-Off Current I CBO 10 10 nA μA V CB =10V, I E =0 V CB =10V, I E =0, T amb = 100°C Static Forward Current Transfer Ratio h FE BFS17L25100I C =2.0mA, V CE =1.0V BFS17H70200I C =2.0mA, V CE =1.0V 20125I C =25mA, V CE =1.0V Transition Frequency f T 1.0 1.3 GHz GHz I C =2.0mA, V CE =5.0V f=500MHz I C =25mA, V CE =5.0V f=500MHz Feedback Capacitance-C re 0.85pFI C =2.0mA, V CE =5V, f=1MHz Output CapacitanceC obo 1.5pFV CB =10V, f=1MHz Input CapacitanceC ibo 2.0pF V EB =0.5V, f=1MHz Noise FigureN4.5dBI C =2.0mA, V CE =5.0V R S =50Ω, f=500MHz Intermodulation Distortion d im -45dBI C =10mA, V CE =6.0V R L =37.5Ω,T amb =25°C V o =100mV at f p =183MHz V o =100mV at f q =200MHz measured at f (2q-p) =217MHz BFS17L BFS17H B E Spice parameter data is available upon request for this device TBA