BFS17LT1 datasheet pdf

1 BFS17LT1MOTOROLA RF DEVICE DATA The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. •T1 suffix indicates tape and reel packaging of 3,000 units per reel. MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO 15Vdc Collector–Base VoltageV CBO 25Vdc Maximum Junction TemperatureT Jmax 150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation, T A = 25°C Derate above 25°C (1) P D 350 2.8 mW mW/°C Storage TemperatureT stg – 55 to +150°C Thermal Resistance Junction to Ambient (1)R θJA 357°C/W DEVICE MARKING BFS17LT1 = E1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mA)V (BR)CEO 15——Vdc Collector–Base Breakdown Voltage (I C = 100 μA)V (BR)CBO 25——Vdc Collector Cutoff Current (V CE = 10 V)I CEO ——25nA Collector Cutoff Current (V CB = 10 V)I CBO ——25nA Emitter Cutoff Current (V EB = 4 V)I EBO ——100μA ON CHARACTERISTICS DC Current Gain (I C = 2 mA, V CE = 1 V) (I C = 25 mA, V CE = 1 V) h FE 20 20 — — 150 — — Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 1 mA) V CE(sat) ——0.4V Base–Emitter Saturation Voltage (I C = 10 mA, I B = 1 mA) V BE(sat) ——1V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 2 mA, V CE = 5 V, f = 500 MHz) (I C = 25 mA, V CE = 5 V, f = 500 MHz) f T — — 1 1.3 — — GHz Output Capacitance (V CB = 10 V, f = 1 MHz)CCB—1—pF Noise Figure (I C = 2 mA, V CE = 5 V, R S = 50 Ω, f = 30 MHz)NF—5—dB NOTE: 1.Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Order this document by BFS17LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFS17LT1 RF TRANSISTOR NPN SILICON CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB)  Motorola, Inc. 1995 REV 7

Specifications