≤
83 °C
P
tot
280
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
240
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Specifications
Semiconductor Group1Dec-18-1996
BFS 17S
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz
at collector currents from 1mA to 20mA
Tape loading orientation
TypeMarkingOrdering CodePin ConfigurationPackage
BFS 17SMCsQ62702-F16451/4=B1/B22/5=E1/E23/6=C2/C1 SOT-363
Maximum Ratings of any single Transistor
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
15V
Collector-base voltageV
CBO
25
Emitter-base voltageV
EBO
2.5
Collector currentI
C
25mA
Peak collector current
f
≥
10 MHz
I
CM
50
Total power dissipation
T
S