BFS17S (1) datasheet pdf

please refer to Application Note AN077 (Thermal Resistance Calculation)

2011-07-201 BFS17S 1 6 2 3 5 4 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see package information below • Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFS17SMCs 1=B12=E13=C24=B25=E26=C1SOT363 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 15V Collector-base voltageV CBO 25 Emitter-base voltageV EBO 2.5 Collector currentI C 25mA Peak collector current, f = 10 MHzI CM 50 Total power dissipation 1)

Specifications

T S ≤ 93 °C P tot 280mW Junction temperatureT J 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT Stg -65 ... 150 Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 2) R thJS ≤ 240 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA