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Semiconductor Group1Nov-28-1996 BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type MarkingOrdering CodePin ConfigurationPackage BFS 17WMCsQ62702-F16451 = B2 = E3 = C SOT-323 Maximum Ratings of any single Transistor ParameterSymbolValuesUnit Collector-emitter voltageV CEO 15V Collector-base voltageV CBO 25 Emitter-base voltageV EBO 2.5 Collector currentI C 25mA Peak collector current f ≥ 10 MHz I CM 50 Total power dissipation T S ≤ 93 °C P tot 280 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 205 K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
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