BFS380L6 datasheet pdf

BFS380L6 Jun-11-2003 1 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz
Built in 2 transistors ( TR1, TR2: die as BFR380L3 ) P-TSLP-6-1 1 2 3 4 5 6 TR1 TR2 123 456 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFS380L6FC 1=C12=E13=C24=B25=E26=B1TSLP-6-1 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltageV CEO 6V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 80mA Base currentI B 14 Total power dissipation 1)

Specifications

T S  96°C P tot 380mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 2) R thJS  140 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance