4.5
4.2
V
Collector-emitter voltageV
CES
15
Collector-base voltageV
CBO
15
Emitter-base voltageV
EBO
1.5
Collector currentI
C
50mA
Base currentI
B
5
Total power dissipation
1)
T
S
≤ 104°C
P
tot
200mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
-65 ... 150
Storage temperatureT
stg
-65 ... 150
1
T
S
is measured on the collector lead at the soldering point to the pcb
Specifications
BFS460L6
Jun-15-2004
1
NPN Silicon RF TWIN Transistor
• High f
T
of 22 GHz
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Excellent ESD performance
• Built in 2 transistors (TR1, TR2: die as BFR460L3)
* Short-term description
1
2
3
4
5
6
TR1
TR2
123
456
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFS460L6AB
1=C12=E13=C24=B25=E26=B1TSLP-6-1
Maximum Ratings
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
> 0 °C
T
A
≤ 0 °C
V
CEO