BFS460L6 datasheet pdf

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BFS460L6 datasheet pdf

Datasheet Information

Pages: 3

4.5 4.2 V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 1.5 Collector currentI C 50mA Base currentI B 5 Total power dissipation 1)

T S ≤ 104°C P tot 200mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 1 T S is measured on the collector lead at the soldering point to the pcb

Specifications
BFS460L6 Jun-15-2004 1 NPN Silicon RF TWIN Transistor • High f T of 22 GHz • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package • Excellent ESD performance • Built in 2 transistors (TR1, TR2: die as BFR460L3) * Short-term description 1 2 3 4 5 6 TR1 TR2 123 456 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFS460L6AB 1=C12=E13=C24=B25=E26=B1TSLP-6-1 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltage T A > 0 °C T A ≤ 0 °C V CEO