Semiconductor Group1Dec-16-1996
BFS 480
NPN Silicon RF Transistor
• For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
•
f
T
= 7GHz
≤
112 °C
P
tot
80
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
470K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
F = 1.5dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFS 480REsQ62702-F15311/4 = B2/5 = E3/6 = CSOT-363
data below is of a single transistor
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
8V
Collector-emitter voltageV
CES
10
Collector-base voltageV
CBO
10
Emitter-base voltageV
EBO
2
Collector currentI
C
10mA
Base currentI
B
1.2
Total power dissipation
T
S