BFS480 datasheet pdf

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BFS480 datasheet pdf

Datasheet Information

Pages: 6

Semiconductor Group1Dec-16-1996 BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • f T = 7GHz

≤ 112 °C P tot 80 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 470K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFS 480REsQ62702-F15311/4 = B2/5 = E3/6 = CSOT-363 data below is of a single transistor Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 8V Collector-emitter voltageV CES 10 Collector-base voltageV CBO 10 Emitter-base voltageV EBO 2 Collector currentI C 10mA Base currentI B 1.2 Total power dissipation T S