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BFS480 1Jun-27-2001 NPN Silicon RF Transistor For low noise, low-power amplifiersin mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m f T = 7 GHz F = 1.5 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package VPS05604 6 3 1 5 4 2 EHA07196 654 321 C1E2B2 C2E1B1 TR1 TR2 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFS480REs1=B2=E3=C4=B5=E6=C SOT363 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltage V CEO 8V Collector-emitter voltage V CES 10 Collector-base voltage V CBO 10 Emitter-base voltage V EBO 2 Collector current I C 10mA Base current I B 1.2 Total power dissipation T S 112 °C 1) P tot 80mW Junction temperature T j 150°C Ambient temperature T A -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 470 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance