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Semiconductor Group1Dec-16-1996 BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • f T = 8 GHz F = 1.4 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFS 481RFsQ62702-F15721/4 = B2/5 = E3/6 = CSOT-363 data below is of a single transistor Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 20mA Base currentI B 2 Total power dissipation T S ≤ 83 °C P tot 175 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 380K/W 1) T S is measured on the collector lead at the soldering point to the pcb.