BFS482 datasheet pdf

Semiconductor Group1Dec-16-1996 BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • f T = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFS 482RGsQ62702-F15731/4 = B2/5 = E3/6 = CSOT-363 data below is of a single transistor Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 35mA Base currentI B 4 Total power dissipation T S ≤ 81 °C P tot 250 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 275K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications