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BFS482 1Jun-27-2001 NPN Silicon RF Transistor For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package VPS05604 6 3 1 5 4 2 EHA07196 654 321 C1E2B2 C2E1B1 TR1 TR2 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFS482RGs1=B2=E3=C4=B5=E6=C SOT363 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 12V Collector-emitter voltage V CES 20 Collector-base voltage V CBO 20 Emitter-base voltage V EBO 2 Collector current I C 35mA Base current I B 4 Total power dissipation T S 81 °C 1) P tot 250mW Junction temperature T j 150°C Ambient temperature T A -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 275 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance