Manufacturer
Unknown
File Size
53.71 KB
Updated
Oct 22, 2025, 03:25 PM
Our procurement experts can help you find the best options and pricing.
Discover drop-in replacements and equivalent components
Get current stock levels and competitive quotes
Expert guidance on specifications and compatibility
Email us directly
support@all-datasheet-pdf.com
Response time: Typically within 24 hours during business days
Loading PDF...
Pages: 6
Semiconductor Group1Dec-16-1996 BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • f T = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFS 483RHsQ62702-F15741/4 = B2/5 = E3/6 = CSOT-363 data below is of a single transistor Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 65mA Base currentI B 5 Total power dissipation T S ≤ 40 °C P tot 450 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 245K/W 1) T S is measured on the collector lead at the soldering point to the pcb.
We can help you confirm compatible replacements, availability, and pricing. Use the options below to reach our team.