BFS483 (1) datasheet pdf

2013-07-251 BFS483 1 6 2 3 5 4 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • f T = 8 GHz, NF min = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistor in one package • For orientation in reel see package information below • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available EHA07196 654 321 C1E2B2 C2E1B1 TR1 TR2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFS483RHs 1=B2=E3=C4=B5=E6=CSOT363