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2003 Oct 132 Philips SemiconductorsProduct specification VHF power MOS transistorBLF244 FEATURES •High power gain •Low noise figure •Easy power control •Good thermal stability •Withstands full load mismatch •Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (V GS ) groups are available on request. PINNING - SOT123A PINDESCRIPTION 1drain 2source 3gate 4source PIN CONFIGURATION CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. handbook, halfpage 1 23 4 MSB057 s d g MBB072 QUICK REFERENCE DATA RF performance at T h = 25°C in a common source test circuit. MODE OF OPERATION f (MHz) V DS (V) P L (W) G p (dB) η D (%) CW, class-B1752815>13>50