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= COLLECTOR 2 & 4 = EMITTER 3 = BASE
T C = 25 O C SYMBOLTEST CONDITIONSMINIMUM TYPICAL MAXIMUMUNITS BV CER I C = 50 mA R BE = 10 Ω 60 V BV CBO I C = 50 mA60 V BV CEO I C = 50 mA30 V BV EBO I E = 10 mA4.0 V h FE V CE = 25 V I C = 2.0 A2045 --- C ob V CB = 30 V f = 1.0 MHz90120 pF C re V CE = 30 V I C = 200 mA f = 1.0 MHz55 pF f T V CE = 25 V I C = 6.0 A f = 100 MHz800 MHz NPN SILICON RF POWER TRANSISTOR BLW75 DESCRIPTION: The ASI BLW75 is Designed for 25V Large-Signal Amplifier Applications, TV Transposers, and Transmitters Operating in Band lll. MAXIMUM RATINGS I C 4.0 A V CE 32 V V CB 60 V P DISS 60 W @ T C = 25 O C T J -65 O C to +200 O C T STG -65 O C to +125 O C θ θθ θ JC 1.9 O C/W PACKAGE STYLE .380" 4L STUD (MOD STUD) 1
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