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BP104, BP104S www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 1 Document Number: 81500 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon PIN Photodiode DESCRIPTION BP104 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. BP104S is packed in tubes, specifications like BP104. FEATURES • Package type: leaded • Package form: top view • Dimensions (in mm): 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm 2 ): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times • Angle of half sensitivity: φ = ± 65° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note **Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters Note • Test condition see table “Basic Characteristics” Note • MOQ: minimum order quantity 948386_1 PRODUCT SUMMARY COMPONENTI ra (μA)φ (deg)λ 0.5 (nm) BP10445± 65870 to 1050 BP104S45± 65870 to 1050 ORDERING INFORMATION ORDERING CODEPACKAGINGREMARKSPACKAGE FORM BP104BulkMOQ: 3000 pcs, 3000 pcs/bulkTop view BP104STubeMOQ: 1800 pcs, 45 pcs/tubeTop view ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONSYMBOLVALUEUNIT Reverse voltageV R 60V Power dissipationT amb ≤ 25 °CP V 215mW Junction temperatureT j 100°C Operating temperature rangeT amb - 40 to + 100°C Storage temperature rangeT stg - 40 to + 100°C Soldering temperaturet ≤ 3 sT sd 260°C Thermal resistance junction/ambientConnected with Cu wire, 0.14 mm 2 R thJA 350K/W