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DA21804 Rev. C-31 of 2BS107 BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · Case: TO-92 Plastic · Leads: Solderable per MIL-STD-202, Method 208 · Pin Connections: See Diagram · Weight: 0.18 grams (approx.) Mechanical Data Maximum Ratings @ T A = 25°C unless otherwise specified Notes:1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. 2. Pulse Test: Pulse width = 80μs, duty factor = 1%. CharacteristicSymbolValueUnit Drain-Source-Voltage V DSS 200V Drain-Gate-Voltage V DGS 200V Gate-Source-Voltage (pulsed) (Note 2) V GS ±20V Drain-Current (continuous) I D 120mA Power Dissipation @T C = 25°C (Note 1) P d 830mW Operating and Storage Temperature Range T j ,T STG -55 to +150°C · High Breakdown Voltage · High Input Impedance · Fast Switching Speed · Specially Suited for Telephone Subsets Inverse Diode @ T A = 25°C unless otherwise specified Characteristic SymbolValueUnit Maximum Forward Current (continuous) I F 0.5A Forward Voltage Drop (typical) @V GS = 0, I F = 0.5A, T j = 25°C V F 0.85V D SG D HH BOTTOM VIEW E A B C G TO-92 DimMinMax A 4.454.70 B 4.464.70 C 12.7— D 0.410.63 E 3.433.68 G 2.422.67 H 1.141.40 All Dimensions in mm CharacteristicSymbolMinTypMaxUnitTest Condition Drain-Source Breakdown Voltage V (BR)DSS 200230—V I D = 100μA, V GS = 0 Gate-Body Leakage Current I GSS ——10nA V GS = 15V, V DS = 0 Drain-Cutoff Current I DSS I DSX —— 30 1.0 nA μA V DS =130V, V GS = 0 V DS = 70V, V GS = 0.2V Gate-Source Threshold Voltage V GS(th) —1.83V V GS =V DS , I D = 1.0mA Drain-Source ON Resistance r DS(ON) —1828W V GS = 2.8V, I D = 20 mA Thermal Resistance, Junction to Ambient Air R qJA ——150K/W (Note 1) Input Capacitance Output Capacitance Feedback Capacitance C iss C oss C rss — 58 8.0 1.5 —pF V DS = 20V, V GS = 0,f =1.0MHz Turn On Time Turn Off Time t on t off — 5.0 15 —ns V GS = 10V, V DS = 10V, R D = 100W Electrical Characteristics @ T A = 25°C unless otherwise specified