BS107 (3) datasheet pdf

VN2010L/BS107 Vishay Siliconix Document Number: 70215 S-04279—Rev. C, 16-Jul-01 www.vishay.com 11-1 N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part NumberV (BR)DSS Min (V) r DS(on) Max (W) V GS(th) (V)I D (A) VN2010L10 @ V GS = 4.5 V0.8 to 1.80.19 BS107 200 28 @ V GS = 2.8 V0.8 to 30.12 DLow On-Resistance: 6 W DSecondary Breakdown Free: 220 V DLow Power/Voltage Driven DLow Input and Output Leakage DExcellent Thermal Stability DLow Offset Voltage DFull-Voltage Operation DEasily Driven Without Buffer DLow Error Voltage DNo High-Temperature “Run-Away” DHigh-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. DTelephone Mute Switches, Ringer Circuits DPower Supply, Converters DMotor Control TO-226AA (TO-92) Top View S D G 1 2 3 VN2010L TO-92-18RM (TO-18 Lead Form) Top View D S G 1 2 3 BS107 Device Marking Front View “S” VN 2010L xxyy “S” = Siliconix Logo xxyy = Date Code Device Marking Front View “S” BS 107 xxyy “S” = Siliconix Logo xxyy = Date Code ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED) ParameterSymbolVN2010LBS107Unit Drain-Source VoltageV DS 200200 Gate-Source VoltageV GS "30"25 V _ T A = 25_C 0.190.12 Continuous Drain Current (T J = 150_C) T A = 100_C I D 0.12 A Pulsed Drain Current a I DM 0.8 T A = 25_C 0.80.5 Power Dissipation T A = 100_C P D 0.32 W Thermal Resistance, Junction-to-AmbientR thJA 156250 _C/W Operating Junction and Storage Temperature RangeT J , T stg –55 to 150 _C Notes a.Pulse width limited by maximum junction temperature.

Specifications