BS107A (1) datasheet pdf

TMOS Switching N–Channel — Enhancement MAXIMUM RATINGS RatingSymbolValueUnit Drain – Source VoltageV DS 200Vdc Gate–Source Voltage — Continuous — Non–repetitive (t p ≤ 50 μs) V GS V GSM ±20 ±30 Vdc Vpk Drain Current Continuous (1) Pulsed (2) I D I DM 250 500 mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 350mW Operating and Storage Junction Temperature Range T J , T stg – 55 to 150°C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (V DS = 130 Vdc, V GS = 0)I DSS ——30nAdc Drain–Source Breakdown Voltage (V GS = 0, I D = 100 μAdc)V (BR)DSX 200——Vdc Gate Reverse Current (V GS = 15 Vdc, V DS = 0)I GSS —0.0110nAdc ON CHARACTERISTICS (2) Gate Threshold Voltage (I D = 1.0 mAdc, V DS = V GS )V GS(Th) 1.0—3.0Vdc Static Drain–Source On Resistance BS107 (V GS = 2.6 Vdc, I D = 20 mAdc) (V GS = 10 Vdc, I D = 200 mAdc) BS107A (V GS = 10 Vdc) (I D = 100 mAdc) (I D = 250 mAdc) r DS(on) — — — — — — 4.5 4.8 28 14 6.0 6.4 Ohms SMALL– SIGNAL CHARACTERISTICS Input Capacitance (V DS = 25 Vdc, V GS = 0, f = 1.0 MHz) C iss —60—pF Reverse Transfer Capacitance (V DS = 25 Vdc, V GS = 0, f = 1.0 MHz) C rss —6.0—pF Output Capacitance (V DS = 25 Vdc, V GS = 0, f = 1.0 MHz) C oss —30—pF Forward Transconductance (V DS = 25 Vdc, I D = 250 mAdc) g fs 200400—mmhos SWITCHING CHARACTERISTICS Turn–On Timet on —6.015ns Turn–Off Timet off —1215ns 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. Order this document by BS107/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BS107 BS107A CASE 29–04, STYLE 30 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1997 1 DRAIN 3 SOURCE 2 GATE  REV 1