BS107P datasheet pdf

N-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 2 – SEPT 93FEATURES* 200 Volt V DS *R DS(on) =23 Ω REFER TO BS107PT FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb =25°C I D 0.12 A Pulsed Drain Current I DM 2A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot 500 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-SourceBreakdown Voltage BV DSS 200 230 V I D =100 μ A, V GS =0V Gate Body Leakage I GSS 10 nA VGS=15V, V DS =0V Drain Cut-Off Current I DSS 30 nA V GS =0V, V DS =130V Drain Cut-Off Current I DSX 1 μ A V GS =0.2V, V DS =70V Static Drain-Sourceon-State Resistance R DS(on) 15 23 30 ΩΩ V GS =2.6V, I D =25mA* V GS =5V, I D =100mA* * Measured under pulsed conditions. Pulse width=300 μ s. Duty cycle ≤ 2% BS107P 3-23 D G S E-Line TO92 Compatible

Features

• *R
• 0.12
• -55 to +150
• * Measured under pulsed conditions. Pulse width=300