BS108 datasheet pdf

 Motorola, Inc. 1997

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. •Low Drive Requirement, V GS = 3.0 V max •Inherent Current Sharing Capability Permits Easy Paralleling of many Devices MAXIMUM RATINGS RatingSymbolValueUnit Drain – Source VoltageV DSS 200Vdc Gate–Source VoltageV GS ±20Vdc Drain Current Continuous (1) Pulsed (2) I D I DM 250 500 mAdc Total Power Dissipation @ T A = 25°C Derate above T A = 25°C P D 350 6.4 mW mW/°C Operating and Storage Temperature RangeT J , T stg – 55 to +150°C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. TMOS is a registered trademark of Motorola, Inc. Order this document by BS108/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BS108 200 VOLTS N–CHANNEL TMOS POWER FET LOGIC LEVEL CASE 29–04, STYLE 30 TO–92 1 2 3  1 DRAIN 2 GATE 3 SOURCE