BS108 (2) datasheet pdf

ambient temperature unless otherwise specified .098 (2.5) max .

∅ .022 (0.55) 4/98 BS108 On special request, this transistor is also manu- factured in the pin configuration TO-18. SymbolValueUnit Drain-Source VoltageV DSS 240V Drain-Gate VoltageV DGS 240V Gate-Source Voltage (pulsed)V GS ±20V Drain Current (continuous)I D 230mA Power Dissipation at T amb = 25 °CP tot 0.83 1) W Junction TemperatureT j 150°C Storage Temperature RangeT S –65 to +150°C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case Inverse Diode SymbolValueUnit Max. Forward Current (continuous) at T amb = 25 °C I F 0.75A Forward Voltage Drop (typ.) at V GS = 0, I F = 0.75 A, T j = 25 °C V F 0.85V ♦ High breakdown voltage ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially suited for telephone subsets

Specifications