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ambient temperature unless otherwise specified .098 (2.5) max .
∅ .022 (0.55) 4/98 BS123 SymbolValueUnit Drain-Source VoltageV DSS 60V Drain-Gate VoltageV DGS 60V Gate-Source Voltage (pulsed)V GS ±20V Drain Current (continuous) at T amb 1) = 25 °C, at T SB 2) = 50 °CI D 1.1A Power Dissipation at T amb 1) = 25 °C, at T SB 2) = 50 °CP tot 830 1) mW Junction TemperatureT j 150°C Storage Temperature RangeT S –65 to +150°C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92). ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown
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