BS170 datasheet pdf

TMOS FET Switching N–Channel — Enhancement MAXIMUM RATINGS RatingSymbolValueUnit Drain – Source VoltageV DS 60Vdc Gate–Source Voltage — Continuous — Non–repetitive (t p ≤ 50 μs) V GS V GSM ±20 ±40 Vdc Vpk Drain Current (1) I D 0.5Adc Total Device Dissipation @ T A = 25°CP D 350mW Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Gate Reverse Current (V GS = 15 Vdc, V DS = 0) I GSS —0.0110nAdc Drain–Source Breakdown Voltage (V GS = 0, I D = 100 μAdc) V (BR)DSS 6090—Vdc ON CHARACTERISTICS (2) Gate Threshold Voltage (V DS = V GS , I D = 1.0 mAdc) V GS(Th) 0.82.03.0Vdc Static Drain–Source On Resistance (V GS = 10 Vdc, I D = 200 mAdc) r DS(on) —1.85.0Ω Drain Cutoff Current (V DS = 25 Vdc, V GS = 0 Vdc) I D(off) ——0.5μA Forward Transconductance (V DS = 10 Vdc, I D = 250 mAdc) g fs —200—mmhos SMALL– SIGNAL CHARACTERISTICS Input Capacitance (V DS = 10 Vdc, V GS = 0, f = 1.0 MHz) C iss ——60pF SWITCHING CHARACTERISTICS Turn–On Time (I D = 0.2 Adc) See Figure 1 t on —4.010ns Turn–Off Time (I D = 0.2 Adc) See Figure 1 t off —4.010ns 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. Order this document by BS170/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BS170 CASE 29–04, STYLE 30 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1997 1 DRAIN 3 SOURCE 2 GATE  REV 1