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BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BS170 / MMBF170 Rev. E21 March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Absolute Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics T A = 25°C unless otherwise noted SymbolParameterBS170MMBF170Units V DSS Drain-Source Voltage60V V DGR Drain-Gate Voltage (R GS ≤ 1MΩ)60V V GSS Gate-Source Voltage± 20V I D Drain Current - Continuous 500500 mA - Pulsed1200800 T J , T STG Operating and Storage Temperature Range- 55 to 150°C T L Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300°C SymbolParameterBS170MMBF170Units P D Maximum Power Dissipation Derate above 25°C 830 6.6 300 2.4 mW mW/°C R θJA Thermal Resistance, Junction to Ambient150417°C/W G S D D G S TO-92 SOT-23 BS170 MMBF170 Features ■ High density cell design for low R DS(ON) . ■ Voltage controlled small signal switch. ■ Rugged and reliable. ■ High saturation current capability.