BS170 (5) datasheet pdf

ambient temperature unless otherwise specified .098 (2.5) max .

∅ .022 (0.55) 4/98 BS170 On special request, this transistor is also manufactured in the pin configuration TO-18. Inverse Diode SymbolValueUnit Drain-Source VoltageV DSS 60V Drain-Gate VoltageV DGS 60V Gate-Source Voltage (pulsed)V GS ± 20V Drain Current (continuous)I D 300mA Power Dissipation at T amb = 25 °CP tot 0.83 1) W Junction TemperatureT j 150°C Storage Temperature RangeT s –65 to +150°C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SymbolValueUnit Max. Forward Current (continuous) at T amb = 25 °C I F 0.5A Forward Voltage Drop (typ.) at V GS = 0, I F = 0.5 A, T j = 25 °C V F 0.85V ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown

Specifications