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DS21901 Rev. E-3 1 of 2 BS208 BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · Case: TO-92, Plastic · Leads: Solderable per MIL-STD-202, Method 208 · Pin Connections: See Diagram · Weight: 0.18 grams (approx.) Mechanical Data Maximum Ratings @ T A = 25°C unless otherwise specified Notes:1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. 2. Pulse Test: Pulse width = 80μs, duty factor = 1%. CharacteristicSymbolValueUnit Drain-Source-Voltage -V DSS 240V Drain-Gate-Voltage -V DGS 200V Gate-Source-Voltage (pulsed) (Note 2) V GS ±20V Drain-Current (continuous) -I D 200mA Power Dissipation @T C = 25°C (Note 1) P d 830mW Operating and Storage Temperature Range T j ,T STG –55 to +150°C · High Breakdown Voltage · High Input Impedance · Fast Switching Speed · Low Drain-Source On-Resistance · Specially Suited for Telephone Subsets Inverse Diode @ T A = 25°C unless otherwise specified Characteristic SymbolValueUnit Maximum Forward Current (continuous) I F 0.22A Forward Voltage Drop (Typical) @V GS = 0, I F = 0.75A, T j = 25°C V F 0.85V D SG D HH BOTTOM VIEW E A B C G TO-92 DimMinMax A 4.454.70 B 4.464.70 C 12.7— D 0.410.63 E 3.433.68 G 2.422.67 H 1.141.40 All Dimensions in mm CharacteristicSymbolMinTypMaxUnitTest Condition Drain-Source Breakdown Voltage -V (BR)DSS 200230—V -I D = 100μA, V GS = 0 Gate-Body Leakage Current -I GSS ——10nA -V GS = 15V, V DS = 0 Drain-Source Cutoff Current -I DSS -I DSX —— 1.0 25 μA -V DS =130V, V GS = 0 -V DS = 10V, -V GS = 0.2V Gate-Source Threshold Voltage -V GS(th) —2.84.0V V GS =V DS , -I D = 1.0mA Drain-Source ON Resistance r DS(ON) —7.014W -V GS = 10V, -I D = 100 mA Thermal Resistance Junction to Ambient R qJA ——150K/W Note 1 Input Capacitance Output Capacitance Feedback Capacitance C iss C oss C rss — 270 35 6.0 —pF -V DS = 20V, V GS = 0, f =1.0MHz Electrical Characteristics @ T A = 25°C unless otherwise specified