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ambient temperature unless otherwise specified .098 (2.5) max .
∅ .022 (0.55) 4/98 BS209 SymbolValueUnit Drain-Source Voltage–V DSS 400V Drain-Gate Voltage–V DGS 400V Gate-Source Voltage (pulsed)V GS ±20V Drain Current (continuous) at T amb = 25 °C–I D 120mA Power Dissipation at T amb = 25 °CP tot 830 1) mW Junction TemperatureT j 150°C Storage Temperature RangeT S –65 to +150°C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode SymbolValueUnit Max. Forward Current (continuous) at T amb = 25 °C I F 400mA Forward Voltage Drop (typ.) at V GS = 0 V, I F = 400 mA, T j = 25 °C V F 1.0V ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown
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