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DS21902 Rev. D-3 1 of 2 BS250 BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR · High Input Impedance · Fast Switching Speed · CMOS Logic Compatible Input · No Thermal Runaway or Secondary Breakdown · Case: TO-92, Plastic · Leads: Solderable per MIL-STD-202, Method 208 · Pin Connection: See Diagram · Approx Weight: 0.18 grams Mechanical Data Features CharacteristicSymbolValueUnit Drain-Source Voltage –V DSS 60V Drain-Gate Voltage –V DGS 60V Gate-Source-Voltage (pulsed) V GS ±20V Drain Current (continuous) –I D 250mA Power Dissipation @T C = 25°C (Note 1) P d 830mW Operating and Storage Temperature Range T j, T STG -55 +150°C CharacteristicSymbolValueUnit Maximum Forward Current (continuous) I F 0.15A Forward Voltage Drop (Typ.) @ V GS = 0, I F = 0.15A, T j = 25°C V F 0.85V Maximum Ratings @ T A = 25°C unless otherwise specified Inverse Diode @ T A = 25°C unless otherwise specified Notes:1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. D SG D HH BOTTOM VIEW E A B C G TO-92 DimMinMax A 4.454.70 B 4.464.70 C 12.7— D 0.410.63 E 3.433.68 G 2.422.67 H 1.141.40 All Dimensions in mm Electrical Characteristics @ T A = 25°C unless otherwise specified CharacteristicSymbolMinTypMaxUnitTest Condition Drain-Source Breakdown Voltage -V (BR)DSS 6070—V I D = 100μA, V GS = 0 Gate Threshold Voltage -V GS(th) —1.03.0V V GS =V DS , –I D = 1.0mA Gate-Body Leakage Current -I GSS ——20nA -V GS = 15V, V DS = 0 Drain-Source Cutoff Current -I DSS ——0.5μA -V DS = 25V, V GS = 0 Drain-Source ON Resistance r DS (ON) —3.55.0W -V GS = 10V, –I D = 0.2A Thermal Resistance, Junction to Ambient Air R qJA ——150K/W Note 1 Forward Transconductance g FS —150—mS -V DS = 10V, –I D = 0.2A, f = 1.0MHz Input Capacitance C iss —60—pF -V DS = 10V, V GS = 0, f = 1.0MHz Switching Times Turn On Time Turn Off Time t on t off — — 5 25 — — ns -V GS = 10V, –V DS = 10V, R D = 100W